sot-89 1. base 2. collector 3. emitter sot-89 plastic-encapsulate transistors transistor (npn) features z small flat package z high transition frequency z high voltage z maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =1ma,i e =0 120 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 120 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 5 v collector cut-off current i cbo v cb =120v,i e =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =5v, i c =100ma 80 240 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 1 v base-emitter voltage v be v ce =5v, i c =0.5a 1 v transition frequency f t v ce =5v,i c =100ma 120 mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz 30 pf classification of h fe rank o y range 80 C 160 120C 240 marking co1 cy1 symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 5 v i c collector current 800 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 2012- 0 willas electronic corp. 2SC2881 applications z power amplifier and voltage amplifier p r e l i m i n a r y
outline drawing dimensions in inches and (millimeters) sot-89 rev.c .047(1.2) .031(0.8) .102(2.60) .091(2.30) .181(4.60) .173(4.39) .061ref (1.55)ref .023(0.58) .016(0.40) .060typ (1.50)typ .118typ (3.0)typ .197(0.52) .013(0.32) .017(0.44) .014(0.35) .063(1.60) .055(1.40) .154(3.91) .167(4.25) 2012- 0 willas electronic corp. sot-89 plastic-encapsulate transistors 2SC2881 p r e l i m i n a r y
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